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Title: Nondegenerate optical Kerr effect in semiconductors

Journal Article · · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/3.283767· OSTI ID:7043793
; ;  [1]
  1. Univ. of Central Florida, Orlando, FL (United States). Center for Research in Electro-Optics and Lasers

The authors calculate the nondegenerate bound electronic nonlinear refractive index n[sub 2]([omega][sub 1];[omega][sub 2]) (i.e., an index change at frequency [omega][sub 1] due to the presence of a beam at frequency [omega][sub 2]) in semiconductors. They calculate this nonlinearity and its dispersion using a Kramers-Kronig transformation on the calculated nondegenerate nonlinear absorption spectrum due to two-photon absorption, electronic Raman and optical Stark effects. The calculated n[sub 2] values and their dispersion are compared to new experimental values for ZnSe and ZnS obtained using a 2-color Z-scan.

OSTI ID:
7043793
Journal Information:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 30:2; ISSN 0018-9197
Country of Publication:
United States
Language:
English