A simple technique for determining deep-level concentrations in high-resistivity semiconductors using capacitance transients
- Oxford Instruments, Oak Ridge, TN (United States)
Many of the practical difficulties of using capacitance transient techniques to determine the concentration of deep levels in the depletion region of a semiconductor diode are discussed with particular reference to high-purity germanium. A method called the [Delta]V[sub C]/V[sub P] technique, is shown to have many advantages for high-resistivity materials when the deep-level concentration is relatively large (N[sub T]/N[sub B] [>=] 0.01) and particularly when there are temperature-dependent equivalent-circuit effects. The technique involves matching the capacitances of two different transients, both following pulses of magnitude V[sub p] but with quiescent biases differing by [Delta]V[sub C], so that the final value of the capacitance transient with reverse bias V[sub R] + [Delta]V[sub C] is the same as the initial value of the transient when the reverse bias is only V[sub R]. The ratio of deep levels (causing the transient) to shallower levels is then given by [Delta]V[sub C]/V[sub P].
- OSTI ID:
- 7043714
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:1 Pt2; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GERMANIUM
DEEP LEVEL TRANSIENT SPECTROSCOPY
HIGH-PURITY GE DETECTORS
ENERGY RESOLUTION
CALCULATION METHODS
CRYSTAL DEFECTS
DEPLETION LAYER
TRAPS
CRYSTAL STRUCTURE
ELEMENTS
GE SEMICONDUCTOR DETECTORS
LAYERS
MEASURING INSTRUMENTS
METALS
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTOR DETECTORS
SPECTROSCOPY
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments