Dielectric constants of silicon quantum dots

Journal Article · Mon Aug 15 04:00:00 EDT 1994 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.73.1039· OSTI ID:7039209

Wang, L; Zunger, A ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Quantum mechanical pseudopotential calculations of the absorption spectra and static dielectric constant [epsilon][sub [ital s]] of Si quantum dots with [similar to]100--1300 atoms are presented. The predicted [epsilon][sub [ital s]] is found to be significantly reduced relative to the bulk value, but is considerably larger than the value deduced from currently available model calculations. A convenient parametrization of [epsilon][sub [ital s]] vs size [ital R] is provided. We find that for quantum dots with [ital R][lt]20 A the electron-hole pair is confined by the physical dimension of the dot, not by the Coulomb attraction.

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 7039209
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 73:7; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ABSORPTION SPECTRA
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY-LEVEL DENSITY
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SOLID CLUSTERS
SPECTRA