Local structure about Mn atoms in In[sub 1[minus][ital x]]Mn[sub [ital x]]As diluted magnetic semiconductors

Journal Article · Mon Mar 15 00:00:00 EST 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.47.7187· OSTI ID:7033165

Krol, A; Soo, Y L; Huang, S; Ming, Z H; Kao, Y H ^[1]; Munekata, H; Chang, L L ^[2]

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1. Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260 (United States)
2. IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598 (United States)

X-ray-absorption fine-structure measurements were performed at the Mn [ital K] edge on In[sub 0.88]Mn[sub 0.12]As diluted magnetic semiconductors prepared by molecular-beam epitaxy. It has been found that in the high-growth-temperature samples ([ital T][sub [ital s]]=280 [degree]C), Mn atoms are primarily incorporated in the form of MnAs clusters with NiAs structure. No significant disorder is observed. In the low-growth-temperature samples ([ital T][sub [ital s]]=210 [degree]C), the majority of Mn atoms form small ([ital r][similar to]3 A), disordered, sixfold-coordinated centers with As. The presence of disorder in MnAs centers for the latter case is established using the method of cumulants. Only a very small fraction of Mn atoms may substitute for In in the zinc-blende InAs structure. Effective valency and coordination of Mn atoms deduced from the near-edge structure are the same for both the high- and low-growth-temperature In[sub 1[minus][ital x]]Mn[sub [ital x]]As films. The formal valency is lower than +3. The local structures established in the present work are consistent with the observed difference in magnetic behavior for samples prepared at different substrate temperatures.

• DOE Contract Number: FG02-87ER45283; FG02-86ER45231
• OSTI ID: 7033165
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 47:12; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM ARSENIDES
CRYSTAL STRUCTURE
SUBSTOICHIOMETRY
MAGNETIC SEMICONDUCTORS
MANGANESE ARSENIDES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
VALENCE
ARSENIC COMPOUNDS
ARSENIDES
INDIUM COMPOUNDS
MANGANESE COMPOUNDS
MATERIALS
PNICTIDES
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS
360602* - Other Materials- Structure & Phase Studies
360606 - Other Materials- Physical Properties- (1992-)