Tilted waveguide semiconductor laser amplifier

Journal Article · Mon Aug 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341696· OSTI ID:7030032

Salzman, J; Hawkins, R J; Zah, C E; Menocal, S; Lee, T P

The performance of a tilted waveguide semiconductor laser amplifier is shown to be affected by tilt-induced intermode coupling at the mirrors of the device. We find that, for some device parameters, higher-order gain-guided modes can dominate the output field pattern of the amplifier even when the gain of the fundamental mode is greater than that of the higher-order modes. A simple coupled-mode analysis is presented to explain these observations, and the observed far-field intensity distribution of a laser amplifier is compared with the calculated results.

• Research Organization: Bell Communications Research, 331 Newman Springs Road, Red Band, New Jersey 07701
• OSTI ID: 7030032
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
AMPLIFIERS
COUPLING
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
GAIN
INFRARED RADIATION
LASER CAVITIES
LASER MIRRORS
LASER RADIATION
LASERS
MIRRORS
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
RADIATIONS
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
WAVEGUIDES