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The effect of side modes on linewidth and intensity fluctuations in semiconductor lasers

Journal Article · · IEEE J. Quant. Electron.; (United States)
DOI:https://doi.org/10.1109/3.190· OSTI ID:7030004
The influence of side modes on the linewidth and intensity fluctuations of the main mode is studied using Monte Carlo techniques. Explicit analytic relations are developed for the side-mode induced linewidth, using impulse responses of the laser obtained from rate equations. It is found that both the absolute level of the main-mode to side-mode power ratio and the passive loss in the side mode influence the main-mode linewidth. A typical 3mW laser has negligible linewidth enhancement from the side mode if the modal power ratio is about 300/1 (or greater), a corresponding to a side-mode loss of 0.2-0.5 dB (or more) for one roundtrip within the laser resonator. Lower side-mode losses yield an abrupt catastrophic increase in main-mode linewidth.
Research Organization:
Bell Communications Research, Inc., 67 Wigwam Rd., Locust, NJ (US)
OSTI ID:
7030004
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:5; ISSN IEJQA
Country of Publication:
United States
Language:
English

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