Laser-induced deposition of alumina from condensed layers of organoaluminum compounds and water

Journal Article · Mon Jul 18 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112378· OSTI ID:7028878

Moore, J F; Strongin, D R ^[1]; Comita, P B ^[2]; Ruckman, M W; Strongin, M ^[3]

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1. Department of Chemistry, State University of New York, Stony Brook, New York 11794-3400 (United States)
2. IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)
3. Physics Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)

The photoassisted deposition of thin aluminum oxide films from layers of trimethylaluminum (TMA), dimethylaluminum hydride, and aluminum hexafluoroacetylacetonate condensed with water on a cold substrate has been investigated. Laser energies of 4.6 or 2.3 eV were used to drive the reactions which led to film growth. Experiments show that clean aluminum oxide films can be synthesized at 80 K by irradiating co-condensed TMA and H[sub 2]O with 4.6 eV light. Techniques used to characterize the films include Auger electron spectroscopy and scanning electron microscopy.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 7028878
• Journal Information: Applied Physics Letters; (United States), Vol. 65:3; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
DEPOSITION
AUGER EFFECT
EV RANGE
LASER RADIATION
ORGANIC COMPOUNDS
THIN FILMS
ALUMINIUM COMPOUNDS
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ENERGY RANGE
FILMS
OXIDES
OXYGEN COMPOUNDS
RADIATIONS
360204* - Ceramics
Cermets
& Refractories- Physical Properties
360201 - Ceramics
Cermets
& Refractories- Preparation & Fabrication