Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

Patent · Tue Feb 19 04:00:00 EST 1991

OSTI ID:7028459

Tiegs, T N; Lindemer, T B

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
• Patent Number(s): A; US 4994416
• Application Number: PPN: US 7-444479
• OSTI ID: 7028459
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360601* -- Other Materials-- Preparation & Manufacture
BONDING
CARBIDES
CARBON COMPOUNDS
COMPOSITE MATERIALS
CRACK PROPAGATION
CRYSTALS
FABRICATION
HEAT TREATMENTS
JOINING
MATERIALS
MONOCRYSTALS
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE TREATMENTS
WHISKERS