Plenum type crystal growth process
This patent describes a method of growing a crystal. It comprises dividing a crystal growth chamber into an upper crystal growing region and a lower plenum region by means of a stationary horizontal baffle extending across the chamber; providing a turbine tube through the baffle between the crystal growing region and plenum region; providing at least one return flow tube through the baffle between the crystals growing region and plenum region, each return flow tube having a diameter less than the turbine flow tube; filling the crystal growing region and plenum region with crystal growing solution; providing flow generating means in the turbine tube; continuously drawing crystal growing solution from the crystal growing region through the turbine tube into the plenum region.
- Assignee:
- US Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 5123997; A
- Application Number:
- PPN: US 7-428536
- OSTI ID:
- 7026624
- Resource Relation:
- Patent File Date: 30 Oct 1989
- Country of Publication:
- United States
- Language:
- English
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