Method of inhibiting dislocation generation in silicon dendritic webs

Patent · Tue Nov 20 00:00:00 EST 1990

OSTI ID:7020435

Spitznagel, J A; Seidensticker, R G; McHugh, J P

A method is disclosed of tailoring the heat balance of the outer edge of the dendrites adjacent the meniscus to produce thinner, smoother dendrites, which have substantially less dislocation sources contiguous with the dendrites, by changing the view factor to reduce radiation cooling or by irradiating the dendrites with light from a quartz lamp or a laser to raise the temperature of the dendrites. 2 figs.

• Assignee: Westinghouse Electric Corp., Pittsburgh, PA (United States)
• Patent Number(s): US 4971650; A
• Application Number: CNN: XARA-73254-AL-CE/02-6639; PPN: US 7-411129
• OSTI ID: 7020435
• Resource Relation: Patent File Date: 22 Sep 1989
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
DISLOCATIONS
HEAT TREATMENTS
DENDRITES
VISIBLE RADIATION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
LINE DEFECTS
RADIATIONS
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies