Slit morphology of electromigration induced open circuit failures in fine line conductors
- Center for Advanced Materials, Lawrence Berkeley Laboratory and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
Detailed transmission and scanning electron microscopic images of electromigration-induced open circuit failures are presented for fine line aluminum alloy thin film interconnects. A characteristic slit open circuit, similar to stress migration open circuits in narrow interconnects, is shown for various film compositions, processing, and deposition conditions. It is suggested that slit failure morphology is more generally observed for low ({approx}1) ratios of conductor line width to film grain size. The slit failures observed often occur near copper rich precipitates. The morphology of several slit voids suggests that they are transgranular across the linewidth, consistent with other recent reports of electromigration induced damage in single crystal interconnects.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 7019152
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 72:7; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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