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Ab initio molecular orbital study of the GaAs hydrides

Journal Article · · Journal of Physical Chemistry; (United States)
DOI:https://doi.org/10.1021/j100173a022· OSTI ID:7017560
;  [1];  [2];  [3]
  1. Philadelphia Coll. of Textiles and Sciences, PA (United States)
  2. Univ. of Delaware, Newark (United States)
  3. Oklahoma State Univ., Stillwater (United States)

The interaction of GaH{sub x} (x = 0{minus}3), electron deficient in the valence shell, and of AsH{sub x} (x = 0{minus}3), electron rich in the valence shell, has been studied by using ab initio molecular orbital methods, which include Moller-Plesset correlation corrections to the fourth order, MP4SDTQ. In most instances, Hartree-Fock (HF) optimizations were used to determine local minima, and in a few cases, MP2 = Full optimizations or MCSCF optimizations were also employed. This research corroborates the work reported by others for the electronic states of GaH, GaH{sub 2}, GaH, AsH, AsH{sub 2}, AsH{sub 3}, and GaAs. The authors report two structures for (GaAs){sub 2}(dimer); the lowest energy conformer appears to be a special case of {mu}-bridged Ga-As{sub 2}-Ga. Monovalent Ga is proposed to explain the lowest energy structure of GaAsH{sub 2}. The lowest energy tetrahydride, H{sub 2}Ga-AsH{sub 2}, is a classical Lewis structure. A double Lewis acid/base adduct, (H{sub 2}Ga-AsH{sub 2}){sub 2}, which can be interpreted in terms of {mu}-bridging, is the dimer structure. This research supports the formations of Lewis acid/base adducts in the thin-film deposition of GaAs by chemical vapor deposition.

OSTI ID:
7017560
Journal Information:
Journal of Physical Chemistry; (United States), Journal Name: Journal of Physical Chemistry; (United States) Vol. 95:20; ISSN 0022-3654; ISSN JPCHA
Country of Publication:
United States
Language:
English