Spatial and frequency dependence of four-wave mixing in broad-area diode lasers

Journal Article · Mon Nov 14 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100364· OSTI ID:7011833

Lucente, M; Fujimoto, J G; Carter, G M

By injecting two external optical beams into a broad-area laser diode, four-wave mixing is generated via gain nonlinearities in the device. The nonlinear signals are observed by spectrally analyzing the transverse far-field profile of the emission from the device. By varying the injection angle and oscillation wavelength of one of the injected beams, the spatial and frequency dependence of this nonlinear process is measured. The results support a spatially dependent dynamic carrier concentration model which includes the effects of carrier diffusion. These measurements provide a direct determination of the ambipolar diffusion constant in the device D = 9.5 cm/sup 2//s.

• Research Organization: Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
• OSTI ID: 7011833
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CARRIER DENSITY
CHARGED-PARTICLE TRANSPORT
DATA
DIFFUSION
EXPERIMENTAL DATA
FREQUENCY DEPENDENCE
GAIN
INFORMATION
LASERS
NUMERICAL DATA
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS