Back contact effects on the electro-optical properties of CdTe/CdS solar cells
Studies of junction photoluminescence (PL) in CdTe/CdS solar cells reveal that back-contact application produces a dramatic qualitative change in the junction picosecond-PL spectrum, Prior to contact application, the spectrum has two peaks at energies of 1.501 eV and 1.457 eV, corresponding to recombination in regions of CdTeS alloy with 2{percent} and 12{percent} sulfur content, respectively. After contact application, the spectrum consists of a single broad peak at 1.48 eV. Previous studies have shown that the nitric-phosphoric (NP) etch used in the contact procedure produces a layer of elemental tellurium (Te) on the CdTe surface. We postulate that the change in the near-junction PL spectrum is caused by a grain-boundary field effect due to perturbations of the grain-boundary conductivity and Fermi level. {copyright} {ital 1999 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Laboratory
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 700943
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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