Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Plasma etching, texturing, and passivation of silicon solar cells

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.57915· OSTI ID:700941
;  [1];  [2];  [3]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0752 (United States)
  2. University of New Mexico, Albuquerque, New Mexico 87106 (United States)
  3. Solarex (a business unit of Amoco/Enron Solar), Frederick, Maryland 21701 (United States)

We improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. We used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. We obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. We also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion. {copyright} {ital 1999 American Institute of Physics.}

Research Organization:
Sandia National Laboratory
DOE Contract Number:
AC04-94AL85000
OSTI ID:
700941
Report Number(s):
CONF-980935--
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English