skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ab initio study of silyldiborane

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100280a039· OSTI ID:7006067

The interaction of singlet SiH/sub 2/ with B/sub 2/H/sub 6/ to form silyldiborane, H/sub 3/Si-B/sub 2/H/sub 5/ has been studied with molecular orbital theory employing the 3-21G and 6-31G/sup */(5D) split valence basis sets. The reaction was found to be exothermic, consistent with previous studies of the reaction of SiH/sub 2/ with BH/sub 3/. The energy of the transition state, corresponding to the insertion of SiH/sub 2/ into a B-H nonbridge bond, was 7.02 kcal/mol above the reactants at the MP4SDQ/6-31G/sup */(5D)//6-31G/sup */(5D) level and 4.17 kcal/mol at the MP4SDTQ/6-31G/sup *///6-31G/sup */(5D) level. Zero-point energy corrections raise the barrier 1.5 kcal/mol. Experimentally it is found that this distribution of the reaction products for the mercury-photosensitized decomposition of silane is unchanged by the addition of diborane. Thus, the existence of a barrier is probable and a likely path for the incorporation of boron into amorphous silicon in CVD processes is the insertion of singlet SiH/sub 2/ into BH/sub 3/ postulated previously. The geometry and harmonic vibrational frequencies are reported for silyldiborane. The geometry of the transition state for the SiH/sub 2/ insertion is also reported.

Research Organization:
Philadelphia College of Textiles and Science, PA
OSTI ID:
7006067
Journal Information:
J. Phys. Chem.; (United States), Vol. 90:22
Country of Publication:
United States
Language:
English