Passivation of paramagnetic Si-SiO/sub 2/ interface states with molecular hydrogen

Journal Article · Mon Aug 08 04:00:00 UTC 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100620· OSTI ID:7004357

Brower, K L

Dry thermal oxides were grown on (111) silicon substrates at 850 /sup 0/C. The P/sub b/ centers associated with this (111) Si-SiO/sub 2/ interface were observed with electron paramagnetic resonance to be stable under subsequent annealing in vacuum up to at least 850 /sup 0/C. The rate of passivation of P/sub b/ centers with H/sub 2/ was observed to be proportional to the concentration of H/sub 2/ in the oxide and the density of P/sub b/ centers. The forward reaction rate constant k/sub f/ is temperature dependent and obeys the Arrhenius relationship having an activation energy E/sub f/ of 1.66 +- 0.06 eV and a pre-exponential factor k/sub 0//sub f/ of 1.94 (+2./-1.) x 10/sup -6/ cm/sup 3/ /s for temperatures at least between 230 and 260 /sup 0/C. The linear H/sub 2/ pressure dependence in the rate of passivation and the magnitude of k/sub 0//sub f/ are reasonably consistent with a model in which the H/sub 2/ molecule reacts directly with P/sub b/ centers during its diffusional motion among the interstices of the SiO/sub 2/ network and the reaction site at P/sub b/ centers.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185-5800
• OSTI ID: 7004357
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHALCOGENIDES
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
ELEMENTS
HYDROGEN
IMPURITIES
INTERFACES
MAGNETIC RESONANCE
MINERALS
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
RESONANCE
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
VERY HIGH TEMPERATURE