Morphology of Au/GaAs interfaces
The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405 /sup 0/C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405 /sup 0/C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.
- Research Organization:
- Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6998119
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:22; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104 -- Metals & Alloys-- Physical Properties
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MICROSCOPY
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
HEAT TREATMENTS
INTERFACES
METALS
MICROSCOPY
MORPHOLOGY
PERFORMANCE
PNICTIDES
ROUGHNESS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE PROPERTIES
SURFACE TREATMENTS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY