Phonon temperature overshoot in GaAs excited by subpicosecond laser pulses

Journal Article · Mon Feb 19 04:00:00 EST 1990 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.64.946· OSTI ID:6993748

Kim, D; Yu, P Y ^[1]

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1. Department of Physics, University of California, Berkeley, California 94720 (US) Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720

Hot electrons and phonons excited in GaAs by subpicosecond laser pulses have been studied by inelastic light scattering for photoexcited electron densities varying between 10{sup 17} and 10{sup 19} cm{sup {minus}3}. Transient overshoot of longitudinal-optical (LO) phonon temperature above the electron temperature has been observed. This is explained by the fast production of zone-center LO phonons by hot electrons combined with slower reabsorption of the emitted phonons due to rapid cooling of {Gamma} valley electrons by intervalley scattering.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6993748
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 64:8; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

656001* -- Condensed Matter Physics-- Solid-State Plasma
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELECTRON DENSITY
ELECTRON TEMPERATURE
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INELASTIC SCATTERING
IONIZATION
LASER RADIATION
LIGHT SCATTERING
MOLECULAR BEAM EPITAXY
PHONONS
PHOTOIONIZATION
PLASMA
PNICTIDES
PULSES
QUASI PARTICLES
RADIATIONS
RAMAN EFFECT
SCATTERING
SOLID-STATE PLASMA
SPECTRAL SHIFT
THICKNESS
THIN FILMS
TRANSIENTS
VERY HIGH TEMPERATURE