High-temperature series expansion for the extended Hubbard model
- Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6030 (United States)
- Institutt for Fysikk, Norges Tekniske Hogskole, Universitetet i Trondheim, N-7034 Trondheim (Norway)
- School of Physics, University of New South Wales, P.O. Box 1, Kensington, New South Wales 2033 (Australia)
- Centro Internacional de Fisica da Materia Condensada, Universidade de Brasilia, Caixa Postal 04667, Brasilia Distrito Federal (Brazil)
We study the single-band Hubbard model, extended by an intersite interaction {ital W}. The method used is the high-temperature series expansion. Series to the sixth order are obtained for the grand canonical potential {Omega}, staggered magnetic susceptibility {chi}{sub AF}, charge-ordered susceptibility {chi}{sub CO}, and compressibility {ital K}. These series are derived with general values of {ital W} and the intrasite interaction {ital U}, for half-filling ({ital n}=1) on a simple cubic lattice. We find that the antiferromagnetic phase is stabilized by repulsive {ital W}, in the limit of strong intrasite repulsion. The effect of nonzero hopping {ital t} on the charge-ordered and condensed phases is also examined. We find that the critical temperature for transition to a condensed phase is reduced, while the charge-ordered phase is destabilized by {ital t} for small, positive, or negative {ital U}, and stabilized for large, negative {ital U}.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 69926
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 51, Issue 20; Other Information: PBD: 15 May 1995
- Country of Publication:
- United States
- Language:
- English
Similar Records
Superconductivity and antiferromagnetism for an extended Hubbard Hamiltonian: Role of correlated hopping in a single-band model
Charge-transfer and magnetic-pairing mechanisms in the extended Hubbard model of high- Tc oxides