An Al sub x Ga sub l minus x Sb avalanche photodiode with a gain bandwidth product of 90 GHz
Journal Article
·
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)
- Fujitsu Labs., Ltd., 10-1 Morinosato, Wakamiya, Atsugi 243-01 (JP)
This paper presents an Al{sub {ital x}}Ga{sub 1 {minus} {ital x}}Sb avalanche photodiode with the Al composition of 0.05. The measured gain bandwidth product of this highly doped diode is 90 GHz, which is, to the authors' knowledge, the largest value for APD's operating in the long-wavelength region.
- OSTI ID:
- 6987637
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Vol. 2:1; ISSN 1041-1135
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM COMPOUNDS
PHOTOCONDUCTIVITY
ANTIMONY COMPOUNDS
GALLIUM COMPOUNDS
PHOTODIODES
FABRICATION
CRYSTAL DOPING
GAIN
MATERIALS TESTING
PERFORMANCE TESTING
AMPLIFICATION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING
140501* - Solar Energy Conversion- Photovoltaic Conversion
400500 - Photochemistry
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM COMPOUNDS
PHOTOCONDUCTIVITY
ANTIMONY COMPOUNDS
GALLIUM COMPOUNDS
PHOTODIODES
FABRICATION
CRYSTAL DOPING
GAIN
MATERIALS TESTING
PERFORMANCE TESTING
AMPLIFICATION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING
140501* - Solar Energy Conversion- Photovoltaic Conversion
400500 - Photochemistry