An Al sub x Ga sub l minus x Sb avalanche photodiode with a gain bandwidth product of 90 GHz

Journal Article · Mon Jan 01 04:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.47041· OSTI ID:6987637

Kuwatsuka, H; Mikawa, T; Miura, S; Yasuoka, N; Tanahashi, T; Wada, O ^[1]

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1. Fujitsu Labs., Ltd., 10-1 Morinosato, Wakamiya, Atsugi 243-01 (JP)

This paper presents an Al{sub {ital x}}Ga{sub 1 {minus} {ital x}}Sb avalanche photodiode with the Al composition of 0.05. The measured gain bandwidth product of this highly doped diode is 90 GHz, which is, to the authors' knowledge, the largest value for APD's operating in the long-wavelength region.

• OSTI ID: 6987637
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:1; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500 -- Photochemistry
ALUMINIUM COMPOUNDS
AMPLIFICATION
ANTIMONY COMPOUNDS
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FABRICATION
GAIN
GALLIUM COMPOUNDS
MATERIALS TESTING
PERFORMANCE TESTING
PHOTOCONDUCTIVITY
PHOTODIODES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING