High-intensity solid-state solar-cell device
The invention contemplates a solar-cell construction wherein plural spaced elongate unit cells of an array are formed from a parallel-grooved single wafer or body of substrate material of a first conductivity type, with adjacent sidewalls of adjacent units at each inter-unit groove formation. Both sidewalls at each of a succession of grooves are formed with regions of second conductivity type, and an electrically conductive coating lines each sidewall having a second conductivity type region. A first output-terminal interconnect extends along one margin of the body and has ohmic contact with the coatings of the sidewalls having regions of the second conductivity type. A second output-terminal connection has ohmic contact to the body in a surface region of first conductivity type. Various embodiments are disclosed.
- Assignee:
- Massachusetts Institute Of Technology
- Patent Number(s):
- US 4352948
- OSTI ID:
- 6981574
- Country of Publication:
- United States
- Language:
- English
Similar Records
High voltage v-groove solar cell
High voltage v-groove solar cell