Conductance modulation in double quantum wells due to magnetic field-induced anticrossing

Journal Article · Mon Oct 17 00:00:00 EDT 1994 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.73.2256· OSTI ID:6975736

Simmons, J A; Lyo, S K; Harff, N E; Klem, J F ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We observe a strong modulation of the low temperature in-plane conductance [ital G][sub [parallel]] of coupled quantum wells (QWs) by an in-plane magnetic field [ital B][sub [parallel]], and attribute this to an anticrossing of the two QW dispersion curves. The anticrossing produces a partial energy gap, yielding large, [ital B][sub [parallel]]-tunable distortions in the Fermi surface and density of states. Sweeping [ital B][sub [parallel]] moves the energy gap through the Fermi level, with the upper and lower gap edges producing a sharp maximum and minimum in [ital G][sub [parallel]], in agreement with theoretical calculations. The gap energy is directly determined from the data.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6975736
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 73:16; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DISPERSION RELATIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON GAS
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY LEVELS
FERMI LEVEL
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
HETEROJUNCTIONS
JUNCTIONS
MAGNETORESISTANCE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS