Single-electron tunneling in double-barrier nanostructures
- Dept. of Physics, State Univ. of New York, Stony Brook, NY (US)
- AT and T Bell, Holmdel, NJ (US)
In this paper, the authors review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.
- OSTI ID:
- 6971243
- Journal Information:
- International Journal of Modern Physics B; (United States), Journal Name: International Journal of Modern Physics B; (United States) Vol. 6:13; ISSN 0217-9792; ISSN IJPBE
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
COULOMB FIELD
DOCUMENT TYPES
ELECTRIC FIELDS
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
HETEROJUNCTIONS
JUNCTIONS
LEPTONS
MAGNETIC FIELDS
RESONANCE
REVIEWS
SEMICONDUCTOR JUNCTIONS
TEMPERATURE DEPENDENCE
TUNNEL EFFECT