Error estimates for a finite element method for the drift-diffusion semiconductor device equations
- Univ. of Minnesota, Minneapolis, MN (United States)
In this paper, optimal error estimates are obtained for a method for numerically solving the so-called unipolar model (a one-dimensional simplified version of the drift-diffusion semi-conductor device equations). The numerical method combines a mixed finite element method using a continuous piecewise-linear approximation of the electric field with an explicit upwinding finite element method using a piecewise-constant approximation of the electron concentration. For initial and boundary data ensuring that the electron concentration is smooth, the L[sup [infinity]](L[sup 1])-error for the electron concentration and the L[sup [infinity]](L[sup [infinity]])-error of the electric field are both proven to be of order [Delta]x. The error analysis is carried out first in the zero diffusion case in detail and then extended to the full unipolar model.
- OSTI ID:
- 6968558
- Journal Information:
- SIAM Journal on Numerical Analysis (Society for Industrial and Applied Mathematics); (United States), Journal Name: SIAM Journal on Numerical Analysis (Society for Industrial and Applied Mathematics); (United States) Vol. 31:4; ISSN 0036-1429; ISSN SJNAAM
- Country of Publication:
- United States
- Language:
- English
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