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Dope carbon centers in hexagonal boron nitride

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6963253

The authors study the nature of defects that occur under certain conditions in the structure of hexagonal boron nitride to the lattice of the cubic modification. Its use as starting material for the preparation of the cubic modification of boron nitride represents the base of modern ultrahard tool materials. The method INDO and the VIKING program have been used to calculate the hypothetic molecule which represents a fragment of one hexagonal boron nitride layer, consisting of three hexagons, with one dope carbon atom replacing a nitrogen atom. The authors point out that the analogous procedure can be used not only to calculate the dope centers but also the nitrogen vacancies and the centers formed when boron nitride is irradiated with an electron beam on an accelerator with a voltage of 550 kV.

OSTI ID:
6963253
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:4; ISSN INOMA
Country of Publication:
United States
Language:
English