N-InAs/GaAs heterostructure superconducting weak links with Nb electrodes

Journal Article · Mon Dec 22 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97233· OSTI ID:6961703

Kleinsasser, A W; Jackson, T N; Pettit, G D; Schmid, H; Woodall, J M; Kern, D P

We report on the fabrication and characterization of planar superconductor-normal-superconductor (SNS) weak links in which the normal region is deposited n-InAs. The InAs is part of a heterostructure consisting of 100 nm of n-InAs grown on an undoped GaAs buffer layer on a semi-insulating GaAs substrate. The superconductor is Nb, patterned by electron beam lithography with interelectrode spacings as small as 260 nm. Device behavior is well explained by SNS weak link theory, with coherence lengths calculated from measured material parameters. These heterostructure weak links can be the basis for superconducting field-effect devices. They have the significant advantage of allowing simple device isolation compared with bulk InAs, which has been used in previous attempts to make such devices.

• Research Organization: IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
• OSTI ID: 6961703
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 49:25
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
SUPERCONDUCTING DEVICES
FABRICATION
HETEROJUNCTIONS
ELECTRODES
GALLIUM ARSENIDES
INDIUM ARSENIDES
NIOBIUM
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
METALS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
TRANSITION ELEMENTS
420201* - Engineering- Cryogenic Equipment & Devices