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Amorphization evidence from kinetic ellipsometry in monolayer-controlled deposition of rf sputtered YBaCuO compounds

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:6957470
Thin films of YBaCuO compounds have been fabricated in a UHV system equipped with three independent diode RF plasmas. The targets are Yttrium, Barium and Copper oxides. The plasma composition is a mixture of Ar and O. The substrates used are silicon wafers, SrTiO/sub 3/ monocrystals, and sintered polycrystalline ZrO/sub 2/. The deposition is achieved by sequential exposure to each target, with an accurate timing controlled by fast shutters and monitored by in situ real time ellipsometry. Grazing incidence X-ray reflectometry is used to check the thicknesses measured by real time ellipsometry. We have investigated in detail the interface reactions between the various oxides during deposition. Our tentative major conclusion is that, although the stoichiometry can be accurately controlled, the reactions between Copper and Barium and Yttrium oxides are such that the film is amorphous. This intrinsic limitation has the consequence that a high temperature annealing is always necessary for achieving crystalline YBa/sub 2/Cu/sub 3/O/sub 7-x/. Because a reaction always occurs with the substrate, thin films with a thickness not greater than 0.1 ..mu..m are markedly peturbed by this substrate reaction and cannot be obtained in the superconducting phase.
Research Organization:
Laboratoires d'Electronique et de Physique Appliquee 3, Avenue Descartes: 94451 Limeil Brevannes Cedex (France)
OSTI ID:
6957470
Report Number(s):
CONF-871178-
Conference Information:
Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 165:1
Country of Publication:
United States
Language:
English