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Electron-impact ionization cross sections of the SiF/sub 3/ free radical

Journal Article · · J. Chem. Phys.; (United States)
OSTI ID:6952595
Absolute cross sections for electron-impact ionization of the SiF/sub 3/ free radical from threshold to 200 eV are presented for formation of the parent SiF/sup +//sub 3/ ion and the fragment SiF/sup +//sub 2/, SiF/sup +/, and Si/sup +/ ions. A 3 keV beam of SiF/sub 3/ is prepared by near-resonant charge transfer of SiF/sup +//sub 3/ with 1,3,5-trimethylbenzene. The beam contains only ground electronic state neutral radicals, but with as much as 1.5 eV of vibrational energy. The absolute cross section for formation of the parent ion at 70 eV is 0.67 +- 0.09 A/sup 2/. At 70 eV the formation of SiF/sup +//sub 2/ is the major process, having a cross section 2.51 +- 0.02 times larger than that of the parent ion, while the SiF/sup +/ fragment has a cross section 1.47 +- 0.08 times larger than the parent. Threshold measurements show that ion pair dissociation processes make a significant contribution to the formation of positively charged fragment ions.
Research Organization:
ATandT Bell Laboratories, Murray Hill, New Jersey 07974
OSTI ID:
6952595
Journal Information:
J. Chem. Phys.; (United States), Journal Name: J. Chem. Phys.; (United States) Vol. 89:7; ISSN JCPSA
Country of Publication:
United States
Language:
English