skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Magnetic relaxation and intrinsic pinning in a single crystal of Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub [ital x]]

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ; ;  [1];  [2];  [3]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  2. Instituto de Fisica, Caixa Postale 6165, Universidade Estadual de Campinas 13081-Campinas, Sao Paulo (Brazil)
  3. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

Magnetic-relaxation experiments were performed on Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub [ital x]] single crystals with the direction of the field parallel to the [ital ab] plane. Based on the relaxation data, we have obtained relationships between the activation energy [ital U] and the current density [ital j] by an approach we developed previously. We found that the activation energy has a logarithmic dependence on [ital j] in a wide regime of driving force. It has been reported that CuO[sub 2] planes in high-[ital T][sub [ital c]] superconductors can act as strong intrinsic pinning centers and that the relation [ital U][similar to][ital U][sub 0]ln([ital j][sub [ital c]]/[ital j]) may describe such a pinning mechanism. Our experimental results have shown good agreement with such a physical model of intrinsic flux pinning.

DOE Contract Number:
W-31-109-ENG-38; FG02-90ER45427
OSTI ID:
6951812
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 47:9; ISSN 0163-1829
Country of Publication:
United States
Language:
English