Current gain and switching speed in a three-terminal nonequilibrium superconducting device
Journal Article
·
· IEEE Trans. Electron Devices; (United States)
A three-terminal nonequilibrium superconducting device controlled by the tunnel-injection of quasi-particles is fabricated and experimentally investigated. The device used in the present experiments has a sandwich structure consisting of NbN and Pb-alloy films. The dc current gain is measured as a function of the current density of the two junctions and the injected power. A current gain larger than unity is obtained when the current density ratio (the acceptor to the injector current) increases. The turn-on time is measured in an experimental circuit using a Josephson sampling technique. The output waveform rises succeeding a turn-on delay of 300 ps after the input current changes. The rise time of the output waveform consists of two parts. About 70 percent of the full output amplitude occurs within 300 ps and the remaining is slow with a time constant of over 1 ns. Also pointed out in the paper are the problems of obtaining a device with large device gain and with high switching speed. Finally, the possibility of using this device in logic circuits is discussed.
- Research Organization:
- Central Research Lab., Hitachi, Ltd. Kokubunji, Tokyo
- OSTI ID:
- 6951479
- Journal Information:
- IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-33:9; ISSN IETDA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of nonequilibrium quasiparticle flow on SNS Josephson junctions
Characteristics of current filamentation in high gain photoconductive semiconductor switching
Turn-on delay analysis of current-injection Josephson logic circuits
Journal Article
·
Tue Oct 01 00:00:00 EDT 1985
· Sov. Phys. - JETP (Engl. Transl.); (United States)
·
OSTI ID:5728670
Characteristics of current filamentation in high gain photoconductive semiconductor switching
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:7115476
Turn-on delay analysis of current-injection Josephson logic circuits
Journal Article
·
Sat Jun 01 00:00:00 EDT 1985
· J. Appl. Phys.; (United States)
·
OSTI ID:5781161
Related Subjects
420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
AMPLIFICATION
AMPLITUDES
CURRENT DENSITY
CURRENTS
DIRECT CURRENT
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
FABRICATION
GAIN
JOSEPHSON EFFECT
JUNCTIONS
LEAD ALLOYS
LOGIC CIRCUITS
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
PERFORMANCE
PNICTIDES
REFRACTORY METAL COMPOUNDS
RESEARCH PROGRAMS
SAMPLING
SUPERCONDUCTING JUNCTIONS
SWITCHING CIRCUITS
TIME MEASUREMENT
TRANSITION ELEMENT COMPOUNDS
VELOCITY
WAVE FORMS
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
AMPLIFICATION
AMPLITUDES
CURRENT DENSITY
CURRENTS
DIRECT CURRENT
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
FABRICATION
GAIN
JOSEPHSON EFFECT
JUNCTIONS
LEAD ALLOYS
LOGIC CIRCUITS
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
PERFORMANCE
PNICTIDES
REFRACTORY METAL COMPOUNDS
RESEARCH PROGRAMS
SAMPLING
SUPERCONDUCTING JUNCTIONS
SWITCHING CIRCUITS
TIME MEASUREMENT
TRANSITION ELEMENT COMPOUNDS
VELOCITY
WAVE FORMS