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Title: Effects of localization on the magnetic transition of thin gadolinium wires

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.345919· OSTI ID:6950054
; ;  [1]
  1. Department of Physics, Southern Illinois University, Carbondale, IL (USA) Molecular Science Program, Southern Illinois University, Carbondale, Illinois 62901-4401 (USA)

Thin wires of gadolinium have been fabricated through a step lithographic technique with cross-sectional areas from 1.3{times}10{sup {minus}11} to 58{times}10{sup {minus}11} cm{sup 2}. The Gd thin films were deposited in a UHV system by thermal evaporation and have a room-temperature resistivity of 85 {mu}{Omega} cm. The electrical resistance of thin films and wires was measured by the four-probe method in the temperature range from 1.5 to 300 K. We also studied the isothermal magnetoresistance at temperatures below 30 K in a magnetic field up to 5.5 T. As the temperature decreases, the resistivity {rho} of Gd wires first decreases towards a minimum at {similar to}55 K, then rises to a maximum at {similar to} 31 K, followed by a sharp drop below 31 K. The minimum in the resistivity at 55 K is associated with the localization effect. It is believed that the sharp drop in {rho} below 31 K is due to a magnetic transition in the Gd wire. This magnetic transition is possible due to a large shift in the Curie temperature caused by a reduction in the density of conduction electrons, arising from localization effects in the thin wire. The magnetoresistance (MR) data below 20 K show a negative value, and the field dependence of MR is similar to that of ferromagnetic metals. This is the first study of thin magnetic wires, to our knowledge.

OSTI ID:
6950054
Journal Information:
Journal of Applied Physics; (USA), Vol. 67:9; ISSN 0021-8979
Country of Publication:
United States
Language:
English