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Theoretical analysis of the concentration and distribution of carriers in YBa sub 2 Cu sub 3 O sub 7 minus x

Journal Article · · Physical Review, B: Condensed Matter; (USA)
; ; ;  [1]
  1. China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing, China (CN) Department of Physics, Peking University, Beijing, China 100871 (CN)
An ionic model and the total-energy method are used to calculate the density and distribution of carriers in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} systems and, in particular, to understand the relationship between the density of carriers and the density of oxygen vacancies in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}}. It is shown that the density of carriers is normally 1{minus}{ital x} per unit cell and the carriers are holes on the oxygen ions in the CuO{sub 2} planes. In addition, for the 1+ valence copper ions Cu{sup +} present in the CuO{open square} plane, the density of Cu{sup +} is normally {ital x} per unit cell.
OSTI ID:
6948309
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:10; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English