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Modeling of undercooling, nucleation, and multiple phase front formation in pulsed-laser-melted amorphous silicon

Journal Article · · Mater. Res. Soc. Symp. Proc.; (United States)
OSTI ID:6947298
Recently available experimental data indicate that the solidification of undercooled molten silicon prepared by pulsed laser melting of amorphous silicon is a complex process. Time-resolved reflectivity and electrical conductivity measurements provide information about near-surface melting and suggest the presence of buried molten layers. Transmission electron micrographs show the formation of both fine- and large-grained polycrystalline regions if the melt front does not penetrate through the amorphous layer. The authors have carried out extensive calculations using a newly developed computer program based on an enthalpy formulation of the heat conduction problem. The program provides the framework for a consistent treatment of the simultaneous formation of multiple states and phase-front propagation by allowing material in each finite-difference cell to melt, undercool, nucleate, and solidify under prescribed conditions. Calculations indicate possibilities for a wide variety of solidification behavior. The new model and selected results of calculations are discussed here and comparison with recent experimental data are made. 12 references, 7 figures.
Research Organization:
Oak Ridge National Lab., TN
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6947298
Journal Information:
Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 35; ISSN MRSPD
Country of Publication:
United States
Language:
English