Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

Journal Article · Fri Jun 01 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94628· OSTI ID:6941694

Wakao, K; Nishi, H; Kusunoki, T; Isozumi, S; Ohsaka, S

InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

• Research Organization: Fujitsu Laboratories, Ltd., 1677 Ono, Atsugi, 243-01, Japan
• OSTI ID: 6941694
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
FABRICATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
LAYERS
LIQUID PHASE EPITAXY
MEDIUM TEMPERATURE
OPERATION
PHOSPHORUS COMPOUNDS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY
VISIBLE RADIATION