Electronic stopping-power calculations for heavy ions in semiconductors

Journal Article · Tue May 15 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345214· OSTI ID:6938731

Elkomoss, S G; Pape, A; Unamuno, S ^[1]

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1. Centre de Recherches Nucleaires, IN2P3-CNRS/Universite Louis Pasteur, BP 20, F-67037 Strasbourg Cedex, France (FR)

A model for ion stopping in semiconductors, which considers separate stopping contributions from valence and core electrons, and explicitly includes the effect of the gap, has been used to calculate the electronic stopping power of energetic B, P, and As in Si, Ge, GaAs, and CdTe for projectile energies 10 keV--100 MeV. Account was taken of the partially stripped incident ions by means of the effective charge. There is good agreement at low ion velocity with Lindhard and Scharff's (J. Lindhard and M. Scharff, Phys. Rev. {bold 124}, 128 (1961)) values which for heavy ions do not depend on effective charge theory, as well as with the semiempirical curves at energies {ital E}{ge}0.2 MeV/nucleon where they can be compared.

• OSTI ID: 6938731
• Journal Information: Journal of Applied Physics; (USA), Vol. 67:10; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ARSENIC IONS
STOPPING POWER
BORON IONS
CADMIUM TELLURIDES
CHARGED-PARTICLE TRANSPORT
GALLIUM ARSENIDES
GERMANIUM
PHOSPHORUS IONS
SILICON
ELECTRONIC STRUCTURE
ENERGY GAP
KEV RANGE 10-100
KEV RANGE 100-1000
MEV RANGE 01-10
MEV RANGE 10-100
SEMICONDUCTOR MATERIALS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
ELEMENTS
ENERGY RANGE
GALLIUM COMPOUNDS
IONS
KEV RANGE
MATERIALS
METALS
MEV RANGE
PNICTIDES
RADIATION TRANSPORT
SEMIMETALS
TELLURIDES
TELLURIUM COMPOUNDS
654001* - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments