Molybdenum etching with chlorine atoms and molecular chlorine plasmas
Journal Article
·
· J. Vac. Sci. Technol., B; (United States)
Thin films of molybdenum were etched both within and downstream from a Cl/sub 2/ plasma at 200-mTorr pressure and temperatures below 180 /sup 0/C. When samples were positioned downstream from the discharge, etching proceeded solely by chemical reaction of the film with chlorine atoms. Without a discharge, molecular chlorine did not etch molybdenum. Downstream and in-discharge etch rates were <20 nm/min and etching by atoms was not observed below 100 /sup 0/C. The chemical reaction between chlorine atoms and molybdenum was proportional to the gas phase Cl atom mole fraction.
- Research Organization:
- Department of Chemical Engineering, University of California, Berkeley, California 94720
- OSTI ID:
- 6936619
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:5; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Etching of tungsten and tungsten silicide films by chlorine atoms
Plasma-enhanced etching of tungsten, tungsten silicide, and molybdenum in chlorine-containing discharges
Kinetics of chlorination and carbochlorination of molybdenum trioxide
Journal Article
·
Mon Aug 01 00:00:00 EDT 1988
· J. Electrochem. Soc.; (United States)
·
OSTI ID:6593178
Plasma-enhanced etching of tungsten, tungsten silicide, and molybdenum in chlorine-containing discharges
Thesis/Dissertation
·
Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:7145269
Kinetics of chlorination and carbochlorination of molybdenum trioxide
Journal Article
·
Tue Aug 01 00:00:00 EDT 1995
· Metallurgical Transactions, B
·
OSTI ID:94380