The microstructure of SiC/TiC in situ composites by chemical vapor deposition
- National Cheng Kung Univ., Tainan (Taiwan, Province of China). Dept. of Materials Science and Engineering
Silicon carbide has many excellent mechanical properties such as high hardness, high temperature strength, thermal shock resistance, oxidation resistance, and chemical inertness. It is an attractive material for wear and structural applications, but the modest fracture toughness value, about 3--4 MPam[sup 1/2], limits its use at high contact stress loading. It is very desirable to improve the fracture toughness with adding second phases of whiskers, fibers or particles. Adding dispersive second-phase particles, TiC or TiB[sub 2], to increase the fracture toughness values of SiC has been successful. Many of the researchers have studied this strengthening with hot-press sintered specimens, but only a few with chemical vapor deposited (CVD) ones. The main purpose of this study is to investigate the microstructure and fracture mechanisms of SiC/TiC composites made by CVD method. It is well known that both SiC and TiC are brittle materials, but the composites have a good toughness and strength due to their differential coefficient of thermal expansion (CTE). Internal stresses can be introduced during cooling after deposition.
- OSTI ID:
- 6932160
- Journal Information:
- Scripta Metallurgica et Materialia; (United States), Journal Name: Scripta Metallurgica et Materialia; (United States) Vol. 31:9; ISSN SCRMEX; ISSN 0956-716X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
BORIDES
BORON COMPOUNDS
CARBIDES
CARBON COMPOUNDS
COMPOSITE MATERIALS
DATA
ELECTRON MICROSCOPY
EXPERIMENTAL DATA
FRACTURE PROPERTIES
INFORMATION
MATERIALS
MECHANICAL PROPERTIES
MICROSCOPY
MICROSTRUCTURE
NUMERICAL DATA
OPTICAL MICROSCOPY
SILICON CARBIDES
SILICON COMPOUNDS
TITANIUM BORIDES
TITANIUM CARBIDES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS