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Title: Preparation and characterization of zirconium carbide field emitters

Journal Article · · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (USA)
DOI:https://doi.org/10.1109/16.43775· OSTI ID:6911209
;  [1];  [2]
  1. Dept. of Physics, Linfield College, McMinnville, OR (US)
  2. Dept. of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverton, OR (US)

The authors' report on experiments to determine the feasibility of using the refractory transition metal carbide ZrC as a stable field-emission cathode. Applications of such cathodes could include radiation-immune microcircuitry, flat-panel displays, e-beam lithography, and other uses where the need is for very high-density, small spot size electron sources. The primary emphasis of this paper is the preparation and analysis of methods needed to obtain stable electron emission from a cold field-emission cathode. CrC single-crystal specimens were prepared by arc floating zone refinement from sintered stock, yielding an average bulk stoichiometry of C/Zr = 0.913. Due to its brittle nature and the high temperatures required for cleaning of this carbide, new mounting methods were developed and are described. Emitter etching procedures are reported for ZrC, as well as {ital in situ} tip sharpening techniques of neon-ion bombardment and temperatures required for thermal cleaning. A temperature of 1500{degrees}C is required to remove adsorbates including oxygen. A clean ZrC field-emission pattern is shown. Ordering of work functions of various crystal planes is reported through field-emission microscopy and comparisons made with thermionic projection microscopy. Effective thermionic work functions are presented for clean surfaces to further support the ordering obtained. The ability of ZrC field emitters to operate at pressures far above those commonly found for field-emission cathodes is demonstrated.

OSTI ID:
6911209
Journal Information:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:11; ISSN 0018-9383
Country of Publication:
United States
Language:
English