Role of hydrogen in hydrogenated amorphous silicon films

Journal Article · Mon Sep 01 04:00:00 EDT 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6909888

Mezdrogina, M M; Golikova, O A; Kudoyarova, V K

The authors investigate a-Si:H films formed by high-frequency decomposition of silane (SiH/sub 4/) and using light (He) and heavy (ar) gaseous solvents at different discharge voltages, which enabled varying the intensity of the bombardment of films by a second independent method. The check of the hydrogen concentration and identification of the form of silicohydrogen complexes were made by IR spectroscopy. An alanlysis of the IR absorption spectra showed that in all investigated films hydrogen occurs predominantly in the form of Si-H complexes and there is a small amount of Si-H/sub 2/ complexes, which correspond to an absorption band at 2090 cm/sup -1/ and a doublet at 845-890 cm/sup -1/.

• Research Organization: A.F. Joffe Physicotechnical Institute, Acad. of Sci.
• OSTI ID: 6909888
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:4; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ABSORPTION SPECTRA
AMORPHOUS STATE
ANNEALING
ARGON
DEPOSITION
DISSOCIATION
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ELEMENTS
FLUIDS
GASES
HEAT TREATMENTS
HELIUM
HIGH-FREQUENCY DISCHARGES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INFRARED SPECTRA
METALLURGICAL EFFECTS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PLASMA ARC SPRAYING
QUANTITY RATIO
RARE GASES
SEMIMETALS
SENSITIVITY
SILANES
SILICON
SILICON COMPOUNDS
SPECTRA
SPRAY COATING
SURFACE COATING