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Preparation and photoelectrochemistry of p-HgIn/sub 2/Te/sub 4/ and p- and n-CdIn/sub 2/Te/sub 2/

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100280a080· OSTI ID:6909259
The photoelectrochemical properties of the two p-type title semiconductors were examined in several redox solutions for the first time. For p-HgIn/sub 2/Te/sub 4/, the quantum efficiency for carrier collection (phi/sub c/) is 94% at short circuit, and the monochromatic and polychromatic power efficiencies calculated from the three electrode cell experiments are 9.5% and 3%, respectively, in iron(III) triethanolamine solution with comparably high values in (Cr(III)EDTA)/sup -/. The flat-band potential (V/sub fb/) is at -0.70 V (vs. SCE) in the former two couples, and indirect and direct gap transitions exist at 0.88 and 1.04 eV, respectively. Stability studies indicate essentially 100% stability to photocorrosion in Fe(III)TEA. For p-CdIn/sub 2/Te/sub 4/, phi/sub c/ is also high at short circuit (91%) and the monochromatic power efficiency is even higher (11%) than for p-HgIn/sub 2/Te/sub 4/ while the polychromatic value is somewhat lower (2%); both calculated from three electrode cell experiments. The V/sub fb/ is at approximately -0.5V (vs. SCE), and both an indirect (1.16 eV) and a direct transition exist (1.24 eV). Data for both semiconductors in a polysulfide solution indicate considerably poorer PEC characteristics than for the other redox solutions.
Research Organization:
Univ. of Houston, University Park, TX
OSTI ID:
6909259
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 90:22; ISSN JPCHA
Country of Publication:
United States
Language:
English