Electron attachment properties of excited dielectric-gas molecules and their possible use for pulse power switching

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:6907694

Christophorou, L G; Hunter, S R; Pinnaduwage, L A; Datskos, P G; Carter, J G

Recent findings on the delicate and often large dependence of the electron attachment (and detachment) processes on the internal (/approximately/ vibrational) energy of dielectric-gas molecules are presented with specific reference to SO/sub 2/F/sub 2/ and several perfluorocarbons. Such effects are strongly dependent on the molecule and the mode (dissociative or nondissociative) of electron attachment and can be used---in a number of novel ways---to enhance the current switching efficiency, stability and recovery characteristics of high current spark gap closing and diffuse discharge opening and closing switches for pulsed power applications. Also, recent findings on the optically modified electron attachment properties of gases via laser-induced electronic excitation are reported with reference to thiophenol (C/sub 6/H/sub 5/SH) and TMAE (tetrakis-dimethyl amino ethylene). The large enhancement (up to 10/sup 6/) in the electron attachment coefficient we have observed in some molecules after irradiation of the gas with uv excimer laser (from low to high), thereby providing a means for actively and repeatedly extinguishing the gas discharge (i.e. opening the switch). 10 refs., 8 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6907694
• Report Number(s): CONF-880948-1; ON: DE88009705
• Country of Publication: United States
• Language: English

Related Subjects

640302* -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
CROSS SECTIONS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON ATTACHMENT
ENERGY-LEVEL TRANSITIONS
EQUIPMENT
EXCITATION
MATERIALS
PHYSICAL PROPERTIES
PLASMA SWITCHES
SWITCHES
TEMPERATURE DEPENDENCE