Surface dependent electron and negative ion density in inductively coupled discharges
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1423 (United States)
Electron and negative ion density have been measured in a modified Applied Materials decoupled plasma source commercial metal etch chamber using gas mixtures of BCl{sub 3}, Cl{sub 2} and Ar. Measurements were performed for four different substrate types to examine the influence of surface material on the bulk plasma properties: aluminum, alumina, photoresist, and 50{percent} patterned aluminum/photoresist. Electron densities in the Cl{sub 2}/BCl{sub 3} mixtures varied from 0.25 to 4{times}10{sup 11}thinspcm{sup {minus}3}. Photodetachment measurements of the negative ion density indicate that the negative ion density was smaller than the electron density and that the electron to negative ion density ratio varied between 1 and 6. The presence of photoresist had a dominant influence on the electron and negative ion density compared to alumina and aluminum surfaces. In most cases, the electron density above wafers covered with photoresist was a factor of 2 lower, while the negative ion density was a factor of 2 higher than the aluminum or alumina surfaces. {copyright} {ital 1999 American Vacuum Society.}
- OSTI ID:
- 690703
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 6 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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