Characterization of buried thin films with resonant soft x-ray fluorescence

Journal Article · Mon Jul 03 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.115483· OSTI ID:69034

Carlisle, J A; Terminello, L J; Hudson, E A ^[1]; Perera, R C.C.; Underwood, J H ^[2]; Callcott, T A; Jia, J J ^[3]; Ederer, D L ^[4]; Himpsel, F J ^[5]; Samant, M G ^[6]

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1. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
2. Lawrence Berkeley Laboratory, Berkeley, California 74720 (United States)
3. University of Tennessee, Knoxville, Tennessee 37996 (United States)
4. Tulane University, New Orleans, Louisiana 70118 (United States)
5. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
6. IBM Research Division, Almaden Research Center, San Jose, California 95120 (United States)

The geometric and electronic structure of a buried monolayer of boron nitride (BN) has been probed using resonant soft x-ray fluorescence (SXF). By using the strong {pi}* resonance feature in the resonant fluorescence spectrum near the {ital B} (1{ital s}) threshold, we were able to detect the BN thin film and examine changes in its electronic structure when the monolayer is placed between different materials. Our results demonstrate the capability of the resonant SXF technique for probing the element-specific electronic structure of a buried thin film nondestructively. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 69034
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 67; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
BORON NITRIDES
ELECTRONIC STRUCTURE
NONDESTRUCTIVE ANALYSIS
RESONANCE
SYNCHROTRON RADIATION
THIN FILMS
X-RAY FLUORESCENCE ANALYSIS