High-power mode-locked semiconductor lasers using flared waveguides

Journal Article · Mon Jun 26 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.113786· OSTI ID:69031

Mar, A ^[1]; Helkey, R ^[2]; Zou, W X ^[3]; Young, D B; Bowers, J E ^[4]

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1. Photonics Research Department, Sandia National Laboratories, M.S. 0603, Albuquerque, New Mexico 87185 (United States)
2. Lincoln Labs, Room J-114, Lexington, Massachusetts 02173 (United States)
3. Optical Interconnection Technology Department, AMP Incorporated, M.S. 140-5b, Harrisburg, Pennsylvania 17105 (United States)
4. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

We describe the use of flared waveguide diode lasers for obtaining increased output power under mode-locked operation. The flared waveguide expands the optical mode from a narrow region which gives a single lateral optical mode, to a wider multimode region for higher pulse saturation energy. Flared gain and flared absorber section geometry devices are compared to devices with conventional uniform waveguides. Using flared gain section devices, improvements in both pulse energy (6.8 pJ) and pulsewidth (3.3 ps) were measured compared to uniform waveguide devices. Peak powers of over 2 W are obtained, which, to our knowledge, is the highest peak power obtained directly from mode-locked single stripe diode lasers. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• OSTI ID: 69031
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 66; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DESIGN
GAIN
MODE LOCKING
PULSES
SEMICONDUCTOR LASERS
WATT POWER RANGE
WAVEGUIDES