Silicon carbide semiconductor device fabrication and characterization. Final report, 10 February 1987-9 February 1990

Technical Report · Thu Feb 01 00:00:00 EST 1990

OSTI ID:6900244

Davis, R F; Das, K

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

• Research Organization: North Carolina State Univ., Raleigh, NC (USA)
• OSTI ID: 6900244
• Report Number(s): N-90-19873; NASA-CR-186354; NAS-1.26:186354
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR DEVICES
ELECTRIC CONTACTS
FABRICATION
SILICON CARBIDES
ANNEALING
CAPACITORS
FIELD EFFECT TRANSISTORS
GOLD
HIGH TEMPERATURE
ION IMPLANTATION
JUNCTION DIODES
PLATINUM
PROGRESS REPORT
SPUTTERING
SUBSTRATES
THIN FILMS
CARBIDES
CARBON COMPOUNDS
DOCUMENT TYPES
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
FILMS
HEAT TREATMENTS
METALS
PLATINUM METALS
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
TRANSISTORS
TRANSITION ELEMENTS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication