Method of making coherent multilayer crystals

Patent · Tue Feb 07 00:00:00 EST 1984

OSTI ID:6899977

Schuller, I K; Falco, C M

A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 A to 2500 A. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.

• Assignee: Dept. of Energy
• Patent Number(s): US 4430183
• OSTI ID: 6899977
• Resource Relation: Patent File Date: Filed date 27 Sep 1982; Other Information: PAT-APPL-424702
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL GROWTH
CONTROL
SEMICONDUCTOR DEVICES
FABRICATION
SEMICONDUCTOR MATERIALS
HEAT TRANSFER
HIGH TEMPERATURE
LATTICE PARAMETERS
LAYERS
MEDIUM VACUUM
SPUTTERING
SUBSTRATES
SUPERCONDUCTORS
THICKNESS
DIMENSIONS
ENERGY TRANSFER
MATERIALS
420201* - Engineering- Cryogenic Equipment & Devices