Point defect incorporation during diamond chemical vapor deposition
- Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
- Gas/Surface Dynamics Section, Code 6174, Naval Research Laboratory, Washington, District of Columbia 20375-5342 (United States)
The incorporation of vacancies, H atoms, and sp{sup 2} bond defects into single-crystal homoepitaxial (100) (2{times}1){endash}and (111)-oriented chemical-vapor-deposited diamond was simulated by atomic-scale kinetic Monte Carlo. Simulations were performed for substrate temperatures from 600 to 1200&hthinsp;{degree}C with 0.4{percent} CH{sub 4} in the feed gas, and for 0.4{endash}7{percent} CH{sub 4} feeds with a substrate temperature of 800&hthinsp;{degree}C. The concentrations of incorporated H atoms increased with increasing substrate temperature and feed gas composition, and sp{sup 2} bond trapping increased with increasing feed gas composition. Vacancy concentrations were low under all conditions. The ratio of growth rate to H atom concentration was highest around 800{endash}900&hthinsp;{degree}C, and the growth rate to sp{sup 2} ratio was maximum around 1{percent} CH{sub 4}, suggesting that these conditions are ideal for economical diamond growth under simulated conditions. {copyright} {ital 1999 Materials Research Society.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 689947
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 8 Vol. 14; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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