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Efficient photovoltaic devices for InP semiconductor/liquid junctions. Technical report

Technical Report ·
OSTI ID:6895163

The photovoltaic behavior of n-InP/metal and n-InP/liquid junctions is investigated. We find that the electrical properties of these semiconductor/liquid junctions are superior to those of n-InP/metal (Schottky barrier) systems, and the current-voltage characteristics are a strong function of the electromechanical potential of the liquid phase. Liquid contacts thus provide a possibility for the construction of more efficient photovoltaic devices than those available at present from Schottky barriers.

Research Organization:
California Inst. of Tech., Pasadena, CA (USA). Dept. of Chemistry
OSTI ID:
6895163
Report Number(s):
AD-A-222717/1/XAB; TR--6; CNN: N00014-88-K-0482
Country of Publication:
United States
Language:
English