In-plane aligned CeO[sub 2] films grown on amorphous SiO[sub 2] substrates by ion-beam assisted pulsed laser deposition
- Solid State Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6056 (United States)
Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6889687
- Journal Information:
- Applied Physics Letters; (United States), Vol. 65:16; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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CERIUM OXIDES
DEPOSITION
ABLATION
GROWTH
ION BEAMS
LASER RADIATION
MORPHOLOGY
RADIATION CHEMISTRY
THIN FILMS
BEAMS
CERIUM COMPOUNDS
CHALCOGENIDES
CHEMISTRY
ELECTROMAGNETIC RADIATION
FILMS
OXIDES
OXYGEN COMPOUNDS
RADIATIONS
RARE EARTH COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication